Numerical Analysis of Inlet Gas-Mixture Flow Rate Effects on Carbon Nanotube Growth Rate

Document Type : Original Research Paper

Authors

1 Mechanical Engineering Department, University of Sistan and Baluchestan, Zahedan, I.R. Iran

2 Electrical and Electronic Department, University of Sistan and Baluchestan, Zahedan, I.R.Iran

3 Chemical Engineering Department, University of Sistan and Baluchestan, Zahedan, I.R. Iran

Abstract

The growth rate and uniformity of Carbon Nano Tubes (CNTs) based on Chemical Vapor Deposition (CVD) technique is investigated by using a numerical model. In this reactor, inlet gas mixture, including xylene as carbon source and mixture of argon and hydrogen as  carrier gas enters into a horizontal CVD reactor at atmospheric pressure. Based on the gas phase and surface reactions, released carbon atoms are grown as CNTs on the iron catalysts at the reactor hot walls. The effect of inlet gas-mixture flow rate, on CNTs growth rate and its uniformity is discussed. In addition the velocity and temperature profile and also species concentrations throughout the reactor are presented. 

Keywords


 [1] S. Iijima, Helical microtubules of graphitic carbon,Nature 354 (1991) 56.
[2] Y.X. Liang, T.H. Wang, A double-walled carbonnanotube field-effect transistor using the inner shellas its gate, Physica E 23 (2004) 232.
[3] C. Klinke, A. Afzali, Interaction of solid organicacids with carbon nanotube field effect transistors,Chemical Physics Letters 430 (2006) 75.
[4] T.W. Odom, J.L. Huang, P. Kim, C.M. Lieber,Atomic structure and electronic properties ofsingle-walled carbon nanotubes, Nature 391(1998) 62–64.
[5] M. Grujicic, G. Cao, B. Gersten, Reactor lengthscalemodeling of chemical vapor deposition ofcarbon nanotubes, J. Mater. Sci. 38(8) (2003)1819–30.
[6] H. Endo, K. Kuwana, K. Saito, D. Qian, R. AndrewsE.A. Grulke, CFD prediction of carbon nanotubeproduction rate in a CVD reactor, Chem.Phys. Lett.387 (2004) 307–311.
[7] K. Kuwana, K. Saito, Modeling CVD synthesisof carbon nanotubes: nanoparticle formation fromferrocene, Carbon 43(10) (2005) 2088–95.
[8] A.A. Puretzky, D.B. Geohegan, S. Jesse, I.N.Ivanov, G. Eres, In situ measurements andmodeling of carbon nanotube array growthkinetics during chemical vapor deposition, Appl.Phys. A 81(2) (2005) 223–40.
[9] C.L. Andrew, W.K.S. Chui, Modeling of the carbonnanotube chemical vapor deposition process usingmethane and acetylene precursor gases,Nanotechnology, 19(16) (2008) 165607–14.
[10] L. Pan, Y. Nakayama, H. Ma, Modelling the growthof carbon nanotubes produced by chemical vapordeposition, Carbon 49 (2011) 854-861.
[11] C.L. Yaws, Chemical Properties Handbook,McGraw-Hill,Newyork 1999.